jmnic product specification silicon npn power transistors 2SC1755 description ? with to-220 package ? high breakdown voltage applications ? for tv chroma,video ,audio output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 0.2 a i cm collector current-peak 0.7 a t a =25 ?? 1.2 p c collector power dissipation t c =25 ?? 15 w t j junction temperature 150 ?? t stg storage temperature -40~150 ??
jmnic product specification 2 silicon npn power transistors 2SC1755 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 300 v v cesat collector-emitter saturation voltage i c =50ma ;i b =5ma 2.0 v i cbo collector cut-off current v cb =200v ;i e =0 0.1 | a i ebo emitter cut-off current v eb =5v; i c =0 0.1 | a h fe dc current gain i c =10ma ; v ce =10v 40 200 f t transition frequency i c =10ma ; v ce =30v 50 mhz c ob collector output capacitance f=1mhz;v cb =50v 5.3 pf ? h fe classifications c d e 40-80 60-120 100-200
jmnic product specification 3 silicon npn power transistors 2SC1755 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
jmnic product specification 4 silicon npn power transistors 2SC1755
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